Low chirp operation in 1.6μm quantum dot laser under 2.5 GHz direct modulation

被引：24

作者：

Saito, H ^{[1
]}

Nishi, K ^{[1
]}

Sugou, S ^{[1
]}

机构：

[1] NEC Corp Ltd, Photon & Wireless Devices Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 21期

关键词：

D O I：

10.1049/el:20010887

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A long wavelength InAs quantum dot laser on an InP substrate was operated under continuous wave current at room temperature and had a threshold current of 20mA. Modulation bandwidth was 4GHz and the low chirp of around 0.01 nm in lasing Wavelength was achieved during 2.5GHz current modulation.

引用

页码：1293 / 1295

页数：3

共 6 条

[1] InAs/GaInAs quantum dot DFB lasers emitting at 1.3μm [J].

Klopf, F ;

Krebs, R ;

Wolf, A ;

Emmerling, M ;

Reithmaier, JP ;

Forchel, A .

ELECTRONICS LETTERS, 2001, 37 (10) :634-636

[2] Gain and linewidth enhancement factor in InAs quantum-dot laser diodes [J].

Newell, TC ;

Bossert, DJ ;

Stintz, A ;

Fuchs, B ;

Malloy, KJ ;

Lester, LF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (12) :1527-1529

[3] Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers [J].

Park, G ;

Huffaker, DL ;

Zou, Z ;

Shchekin, OB ;

Deppe, DG .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (03) :301-303

[4] Low chirp observed in directly modulated quantum dot lasers [J].

Saito, H ;

Nishi, K ;

Kamei, A ;

Sugou, S .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (10) :1298-1300

[5] Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates [J].

Saito, H ;

Nishi, K ;

Sugou, S .

APPLIED PHYSICS LETTERS, 2001, 78 (03) :267-269

[6] Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure [J].

Stintz, A ;

Liu, GT ;

Li, H ;

Lester, LF ;

Malloy, KJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (06) :591-593

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