Preparation of transparent conducting Zn2In2O5 films by d.c. magnetron sputtering

被引：23

作者：

Minami, T ^{[1
]}

Kakumu, T ^{[1
]}

Takeda, Y ^{[1
]}

Takata, S ^{[1
]}

机构：

[1] Kanazawa Inst Technol, Nonoichi, Ishikawa 921, Japan

来源：

THIN SOLID FILMS | 1998年 / 317卷 / 1-2期

关键词：

magnetron sputtering; etching; films;

D O I：

10.1016/S0040-6090(97)00548-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly transparent and conductive Zn2In2O5 films have been prepared by d.c. magnetron sputtering using targets composed of ZnO and In2O3. The films deposited on substrates at a temperature of 350 degrees C using targets with a composition (Zn:(In + Zn) atomic ratio) of approximately 20 to 60 at.% were identified as Zn2In2O5. The etching rate of the films in a HCl solution was strongly dependent on the Zn:(In + Zn) atomic ratio and the substrate temperature. Zn2In2O5 films deposited on substrates at a temperature of room temperature to 350 degrees C exhibited a resistivity of 2-4 x 10(-4) Omega cm. An average transmittance of above 85% in the visible range was obtained in the films. (C) 1998 Elsevier Science S.A.

引用

页码：326 / 329

页数：4

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