Heteroepitaxial diamond growth on platinum(111) by the Shintani process

被引：59

作者：

Tachibana, T ^{[1
]}

Yokota, Y ^{[1
]}

Nishimura, K ^{[1
]}

Miyata, K ^{[1
]}

Kobashi, K ^{[1
]}

Shintani, Y ^{[1
]}

机构：

[1] UNIV TOKUSHIMA,FAC ENGN,DEPT ELECT & ELECTR ENGN,TOKUSHIMA 770,JAPAN

来源：

关键词：

heteroepitaxy; platinum; single crystal; CVD microwave;

D O I：

10.1016/0925-9635(95)00473-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond films with (111) facets were grown heteroepitaxially on Pt(lll) using microwave plasma enhanced chemical vapor deposition. It was observed that many of the neighboring facets coalesced with each other. X-Ray diffraction analyses revealed that the (111) planes of diamond films were parallel to the substrate surface and azimuthally well oriented. The films were confirmed as diamond using Raman spectroscopy.

引用

页码：197 / 199

页数：3

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