High speed and high reliability InP/InGaAs avalanche photodiode for optical communications

被引：6

作者：

Hyun, KS ^{[1
]}

Paek, Y ^{[1
]}

Kwon, YH ^{[1
]}

Yun, I ^{[1
]}

Lee, EH ^{[1
]}

机构：

[1] Sejong Univ, Sch Elect & Informat Engn, Seoul 143747, South Korea

来源：

QUANTUM SENSING: EVOLUTION AND REVOLUTION FROM PAST TO FUTURE | 2003年 / 4999卷

关键词：

avalanche photodiode; photodetector; reliability; optical communication; III-V semiconductors;

D O I：

10.1117/12.479551

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a review of the characteristics of several different types of high speed InGaAs/InP avalanche photodiode (APD)s that we have developed for different guard ring depth and for different main p-n junction shape. The APD structure that we propose consists of a greatly reduced width in InP multiplication layer and a high doping concentrated electric field buffer layer, where we also adopted a floating guard ring and a shaped main junction with recess etching for a reliable operation of an APD. We obtained high reliability APDs, which are tested for two-dimensional gain behavior and for accelerated life tests by monitoring dark current and breakdown voltage. The gain and bandwidth product of the best of our APDs was measured as high as 80 GHz.

引用

页码：130 / 137

页数：8

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