Imaging the formation of a p-n junction in a suspended carbon nanotube with scanning photocurrent microscopy

被引：15

作者：

Buchs, Gilles ^{[1
]}

Barkelid, Maria ^{[1
]}

Bagiante, Salvatore ^{[2
]}

Steele, Gary A. ^{[1
]}

Zwiller, Val ^{[1
]}

机构：

[1] Kavli Inst Nanosci, TU Delft, NL-2600 GA Delft, Netherlands

[2] Ist Microelettron Microsistemi, Consiglio Nazl Ric, I-95121 Catania, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 07期

关键词：

TRANSISTORS; GENERATION; DIODES;

D O I：

10.1063/1.3645022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at any position along the nanotube axis. Combining SPCM with transport measurements allows a detailed microscopic study of the evolution of the band profiles as a function of the gates voltage. Here we study the emergence of a p-n and a n-p junctions out of a n-type transistor channel using two local gates. In both cases the I - V curves recorded for gate configurations corresponding to the formation of the p-n or n-p junction in the SPCM measurements reveal a clear transition from resistive to rectification regimes. The rectification curves can be fitted well to the Shockley diode model with a series resistor and reveal a clear ideal diode behavior. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3645022]

引用

页数：4

共 17 条

[1] The Role of the Oxygen/Water Redox Couple in Suppressing Electron Conduction in Field-Effect Transistors [J].

Aguirre, Carla M. ;

Levesque, Pierre L. ;

Paillet, Matthieu ;

Lapointe, Francois ;

St-Antoine, Benoit C. ;

Desjardins, Patrick ;

Martel, Richard .

ADVANCED MATERIALS, 2009, 21 (30) :3087-+

[2] Photocurrent imaging of p-n junctions in ambipolar carbon nanotube transistors [J].

Ahn, Y. H. ;

Tsen, A. W. ;

Kim, Bio ;

Park, Yung Woo ;

Park, Jiwoong .

NANO LETTERS, 2007, 7 (11) :3320-3323

[3] Photocurrent imaging of charge transport barriers in carbon nanotube devices [J].

Balasubramanian, K ;

Burghard, M ;

Kern, K ;

Scolari, M ;

Mews, A .

NANO LETTERS, 2005, 5 (03) :507-510

[4] Transport in carbon nanotube p-i-n diodes [J].

Bosnick, Ken ;

Gabor, Nathan ;

McEuen, Paul .

APPLIED PHYSICS LETTERS, 2006, 89 (16)

[5] Electronic and transport properties of nanotubes [J].

Charlier, Jean-Christophe ;

Blase, Xavier ;

Roche, Stephan .

REVIEWS OF MODERN PHYSICS, 2007, 79 (02) :677-732

[6] Extremely Efficient Multiple Electron-Hole Pair Generation in Carbon Nanotube Photodiodes [J].

Gabor, Nathaniel M. ;

Zhong, Zhaohui ;

Bosnick, Ken ;

Park, Jiwoong ;

McEuen, Paul L. .

SCIENCE, 2009, 325 (5946) :1367-1371

[7] Photon antibunching in the photoluminescence spectra of a single carbon nanotube [J].

Hoegele, Alexander ;

Galland, Christophe ;

Winger, Martin ;

Imamoglu, Atac .

PHYSICAL REVIEW LETTERS, 2008, 100 (21)

[8] NONCLASSICAL LIGHT GENERATION BY COULOMB BLOCKADE OF RESONANT TUNNELING [J].

IMAMOGLU, A ;

YAMAMOTO, Y .

PHYSICAL REVIEW B, 1992, 46 (24) :15982-15991

[9] Synthesis of individual single-walled carbon nanotubes on patterned silicon wafers [J].

Kong, J ;

Soh, HT ;

Cassell, AM ;

Quate, CF ;

Dai, HJ .

NATURE, 1998, 395 (6705) :878-881

[10] Photovoltaic effect in ideal carbon nanotube diodes [J].

Lee, JU .

APPLIED PHYSICS LETTERS, 2005, 87 (07)

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