Optical band gap in Ga1-xInxN (O<x<0.2) on GaN by photoreflection spectroscopy

被引：186

作者：

Wetzel, C ^{[1
]}

Takeuchi, T

Yamaguchi, S

Katoh, H

Amano, H

Akasaki, I

机构：

[1] Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[2] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 14期

关键词：

D O I：

10.1063/1.122346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical band gap in 40 nm Ga1-xInxN/GaN single heterostructures is investigated in the composition range 0<x<0.2 by photoreflection spectroscopy (PR) at room temperature and compared with photoluminescence (PL) data. Clear PR oscillations at the GaInN band gap are observed as originating in the large piezoelectric field. Effective band gap bowing parameters b are derived for pseudomorphically stressed GaInN on GaN: b=2.6 eV (PR) and b=3.2 eV (PL in localized states). Using experimental deformation potentials of GaN, b=3.8 eV is extrapolated for the optical band gap in relaxed GaInN material. Previously reported smaller values are discussed. (C) 1998 American Institute of Physics. [S0003-6951(98)00940-1].

引用

页码：1994 / 1996

页数：3

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Optical band gap in Ga1-xInxN (O&lt;x&lt;0.2) on GaN by photoreflection spectroscopy

Optical band gap in Ga1-xInxN (O<x<0.2) on GaN by photoreflection spectroscopy