Structural transformations and silicon nanocrystallite formation in SiOx films

被引：45

作者：

Bratus', VY ^{[1
]}

Yukhimchuk, VA ^{[1
]}

Berezhinsky, LI ^{[1
]}

Valakh, MY ^{[1
]}

Vorona, IP ^{[1
]}

Indutnyi, IZ ^{[1
]}

Petrenko, TT ^{[1
]}

Shepeliavyi, PE ^{[1
]}

Yanchuk, IB ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

SEMICONDUCTORS | 2001年 / 35卷 / 07期

关键词：

D O I：

10.1134/1.1385719

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of a comprehensive study by the methods of IR absorption, Raman scattering, photoluminescence (PL), and electron spin resonance (ESR) of SiOx films prepared by thermal evaporation of SiO in a vacuum are presented. The nature of structural transformations occurring on annealing the films is determined. Annealing in the temperature range 300-600 degreesC gives rise to a PL band at 650 nm, presumably related to structural defects in SiOx film. Raising the annealing temperature further leads to healing of such defects and quenching of the PL band. Silicon precipitates pass from the amorphous to the crystalline state on being annealed at T-ann = 1100 degreesC, which gives rise to a new PL band at 730 nm. ESR spectra of P-b centers were recorded at the interface between randomly oriented silicon nanocrystallites and SiO2. (C) 2001 MAIK "Nauka/ Interperiodica".

引用

页码：821 / 826

页数：6

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