Theory of semiconductor magnetic bipolar transistors

被引：73

作者：

Flatté, ME

Yu, ZG

Johnston-Halperin, E

Awschalom, DD

机构：

[1] Univ Iowa, Opt Sci & Technol Ctr, Iowa City, IA 52242 USA

[2] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA

[3] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

[4] Univ Calif Santa Barbara, Ctr Spintron & Quantum Computat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 26期

关键词：

D O I：

10.1063/1.1586996

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bipolar transistors with a ferromagnetic base are shown theoretically to have the potential to generate almost 100% spin-polarized current injection into nonmagnetic semiconductors. Optical control of ferromagnetism and spin splitting in the base can lead to either long-lived or ultrafast switching behavior. Fringe field control of the base magnetization could be used for information transfer between metallic magnetoelectronics and conventional semiconducting electronics. (C) 2003 American Institute of Physics.

引用

页码：4740 / 4742

页数：3

共 28 条

[21] Electrical spin injection in a ferromagnetic semiconductor heterostructure [J].