InGaN heterostructures grown by molecular beam epitaxy:: from growth mechanism to optical properties

被引：15

作者：

Damilano, B ^{[1
]}

Grandjean, N ^{[1
]}

Vézian, S ^{[1
]}

Massies, J ^{[1
]}

机构：

[1] CNRS, Ctr Rech Heteroepitaxie & Ses Applicat, F-06560 Valbonne, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

growth model; low dimensional structures; optical properties; molecular beam epitaxy; nitrides;

D O I：

10.1016/S0022-0248(01)00744-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaN and InGaN layers are grown by molecular beam epitaxy using ammonia as nitrogen precursor. The lattice mismatch between InN and GaN is very large and a Stranski-Krastanov (SK) growth mode transition can occur above a critical In composition. However, changing the growth conditions, namely increasing the NH3 flux, allows one to promote the 2D growth. This phenomenon can be ascribed to a surfactant effect of hydrogen atoms (or NHx radicals) present at the growth surface. The optical properties of InGaN/GaN quantum dots, made by SK growth mode, and InGaN/GaN quantum wells are compared. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：466 / 470

页数：5

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