Structural and electrical properties of TixAl1-xOy thin films grown by atomic layer deposition

被引：26

作者：

Alekhin, A. P. ^{[1
]}

Chouprik, A. A. ^{[1
]}

Gudkova, S. A. ^{[1
]}

Markeev, A. M. ^{[1
]}

Lebedinskii, Yu. Yu. ^{[2
]}

Matveyev, Yu. A. ^{[2
]}

Zenkevich, A. V. ^{[2
]}

机构：

[1] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia

[2] Moscow Engn Phys Inst, Moscow 115409, Russia

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 01期

关键词：

HIGH-K; GATE DIELECTRICS; GENERATION; SILICON; DEVICES;

D O I：

10.1116/1.3533763

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ternary oxide TixAl1-xOy thin films with a wide Ti/Al ratio have been grown by atomic layer deposition technique. As grown titanium aluminate films are shown to be a homogeneous alloy and exhibit the amorphous structure in the whole compositional range, while rapid thermal processing (RTP) induces the crystallization of binary and ternary phases once the composition of TixAl1-xOy film is close to the specific phase stoichiometry. The permittivity kappa varies in the range kappa = 12-30 depending on Ti/Al ratio in the film. A0.5-nm-thick SiO2 layer formed at the film/Si interface during the deposition grows up to 2 nm upon RTP and presumably affect. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3533763]

引用

页数：6

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