Resonant tunnel diodes as submillimetre-wave sources

被引:12
作者
Brown, ER
Parker, CD
机构
[1] Lincoln Laboratory, Massachusetts Inst. of Technology, Lexington
来源
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 1996年 / 354卷 / 1717期
关键词
D O I
10.1098/rsta.1996.0105
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Resonant-tunnelling diodes (RTDs) are one of the only quantum-transport devices that operate effectively at room temperature, and are well known for their high-speed coherent generation and switching characteristics associated with the negative differential resistance (NDR) region. This paper addresses their capability as high-frequency coherent sources. Two types of sources will be addressed here: (i) quasi-sinusoidal oscillators connected to a resonant circuit, and (ii) relaxation oscillators connected to a high-frequency energy-storage element, such as a length of transmission line. To date, the highest-frequency sinusoidal oscillator was a waveguide-mounted InAs-AlSb RTD that performed up to 712 GHz. Transmission-line relaxation oscillators have been demonstrated only at microwave frequencies but show promise as submillimetre-wave sources. Their output waveform consists of a sequence of pulses having a repetition rate determined by the electrical delay of the transmission line and a pulse width determined by the switching time of the diode. Because they do not require De-bias stability in the NDR region, they are quite amenable to power-combining techniques, such as parallel arrays, and could behave in an analogous manner to the atomic species in a mode-locked laser.
引用
收藏
页码:2365 / 2381
页数:17
相关论文
共 16 条
[1]  
[Anonymous], [No title captured]
[2]   UNDERSTANDING NOISE IN SIS RECEIVERS [J].
BLUNDELL, R ;
MILLER, RE ;
GUNDLACH, KH .
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1992, 13 (01) :3-14
[3]   HIGH-FIELD TRANSPORT IN GAAS, INP AND INAS [J].
BRENNAN, K ;
HESS, K .
SOLID-STATE ELECTRONICS, 1984, 27 (04) :347-357
[4]   EFFECT OF QUASIBOUND-STATE LIFETIME ON THE OSCILLATION POWER OF RESONANT TUNNELING DIODES [J].
BROWN, ER ;
PARKER, CD ;
SOLLNER, TCLG .
APPLIED PHYSICS LETTERS, 1989, 54 (10) :934-936
[5]   A QUASIOPTICALLY STABILIZED RESONANT-TUNNELING-DIODE OSCILLATOR FOR THE MILLIMETER-WAVE AND SUBMILLIMETER-WAVE REGIONS [J].
BROWN, ER ;
PARKER, CD ;
MOLVAR, KM ;
STEPHAN, KD .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1992, 40 (05) :846-850
[6]   OSCILLATIONS UP TO 420 GHZ IN GAAS/ALAS RESONANT TUNNELING DIODES [J].
BROWN, ER ;
SOLLNER, TCLG ;
PARKER, CD ;
GOODHUE, WD ;
CHEN, CL .
APPLIED PHYSICS LETTERS, 1989, 55 (17) :1777-1779
[7]   OSCILLATIONS UP TO 712 GHZ IN INAS/ALSB RESONANT-TUNNELING DIODES [J].
BROWN, ER ;
SODERSTROM, JR ;
PARKER, CD ;
MAHONEY, LJ ;
MOLVAR, KM ;
MCGILL, TC .
APPLIED PHYSICS LETTERS, 1991, 58 (20) :2291-2293
[8]   IMPROVED DESIGN OF ALAS/GAAS RESONANT TUNNELING DIODES [J].
CHENG, P ;
HARRIS, JS .
APPLIED PHYSICS LETTERS, 1990, 56 (17) :1676-1678
[9]   FABRICATION OF 200-GHZ FMAX RESONANT-TUNNELING DIODES FOR INTEGRATED-CIRCUIT AND MICROWAVE APPLICATIONS [J].
DIAMOND, SK ;
OZBAY, E ;
RODWELL, MJW ;
BLOOM, DM ;
PAO, YC ;
WOLAK, E ;
HARRIS, JS .
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (03) :104-106
[10]   A PSEUDOMORPHIC IN0.53GA0.47AS ALAS RESONANT TUNNELING BARRIER WITH A PEAK-TO-VALLEY CURRENT RATIO OF 14 AT ROOM-TEMPERATURE [J].
INATA, T ;
MUTO, S ;
NAKATA, Y ;
SASA, S ;
FUJII, T ;
HIYAMIZU, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (08) :L1332-L1334