GaN Schottky barrier photodetectors with SiN/GaN nucleation layer

被引：23

作者：

Jhou, Y. D. ^{[1
]}

Chang, S. J.

Su, Y. K.

Lee, Y. Y.

Liu, C. H.

Lee, H. C.

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[4] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 701, Taiwan

[5] Natl Cheng Kung Univ, Inst Nanotechnol & Microsyst Engn, Tainan 701, Taiwan

[6] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 701, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 10期

关键词：

DOUBLE-BUFFER LAYERS; NITRIDE-BASED LEDS; P-I-N; ULTRAVIOLET DETECTORS; UV PHOTODETECTORS; CAP LAYERS; DIODES; PHOTODIODES; DETECTIVITY; SUBSTRATE;

D O I：

10.1063/1.2779854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN Schottky barrier photodetectors with SiN/GaN nucleation layer were fabricated. It was found that leakage current was much smaller and much less bias dependent for the photodetector with SiN/GaN nucleation layer, as compared to the photodetector with conventional low-temperature GaN nucleation layer. It was also found that effective Schottky barrier height increased from 1.27 to 1.53 eV with the insertion of the SiN layer. Furthermore, it was found that the authors can effectively suppress internal gain of the detector and enhance ultraviolet to visible rejection ratio by using the SiN/GaN nucleation layer. (C) 2007 American Institute of Physics.

引用

页数：3

共 17 条

[1] Solar-blind AlGaN-based p-i-n photodiodes with low dark current and high detectivity [J].

Biyikli, N ;

Kimukin, I ;

Aytur, O ;

Ozbay, E .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (07) :1718-1720

[2] Nitride-based MIS-like photodiodes with semiinsulating Mg-doped GaN cap layers [J].

Chang, S. J. ;

Yu, C. L. ;

Chuang, R. W. ;

Chang, P. C. ;

Lin, Y. C. ;

Jhan, Y. W. ;

Chen, C. H. .

IEEE SENSORS JOURNAL, 2006, 6 (05) :1043-1044

[3] Nitride-based LEDs with 800 °C grown p-AllnGaN-GaN double-cap layers [J].

Chang, SJ ;

Wu, LW ;

Su, YK ;

Hsu, YP ;

Lai, WC ;

Tsai, JA ;

Sheu, JK ;

Lee, CT .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (06) :1447-1449

[4] Highly reliable nitride-based LEDs with SPS plus ITO upper contacts [J].

Chang, SJ ;

Chang, CS ;

Su, YK ;

Chuang, RW ;

Lin, YC ;

Shei, SC ;

Lo, HM ;

Lin, HY ;

Ke, JC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (11) :1439-1443

[5] InGaN-GaN multiquantum-well blue and green light-emitting diodes [J].

Chang, SJ ;

Lai, WC ;

Su, YK ;

Chen, JF ;

Liu, CH ;

Liaw, UH .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :278-283

[6] A new buffer layer for high quality GaN growth by metalorganic vapor phase epitaxy [J].

Kachi, T ;

Tomita, T ;

Itoh, K ;

Tadano, H .

APPLIED PHYSICS LETTERS, 1998, 72 (06) :704-706

[7] Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry [J].

Katz, O ;

Garber, V ;

Meyler, B ;

Bahir, G ;

Salzman, J .

APPLIED PHYSICS LETTERS, 2002, 80 (03) :347-349

[8] Gain mechanism in GaN Schottky ultraviolet detectors [J].

Katz, O ;

Garber, V ;

Meyler, B ;

Bahir, G ;

Salzman, J .

APPLIED PHYSICS LETTERS, 2001, 79 (10) :1417-1419

[9] Nitride-based blue LEDs with GaN/SiN double buffer layers [J].

Kuo, CH ;

Chang, SJ ;

Su, YK ;

Wang, CK ;

Wu, LW ;

Sheu, JK ;

Wen, TC ;

Lai, WC ;

Tsai, JM ;

Lin, CC .

SOLID-STATE ELECTRONICS, 2003, 47 (11) :2019-2022

[10] High-performance GaN p-n junction photodetectors for solar ultraviolet applications [J].

Monroy, E ;

Munoz, E ;

Sanchez, FJ ;

Calle, F ;

Calleja, E ;

Beaumont, B ;

Gibart, P ;

Munoz, JA ;

Cusso, F .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (09) :1042-1046

← 1 2 →