Atomic structure of the Sb-stabilized GaAs(100)-(2x4) surface

被引：46

作者：

Esser, N

Shkrebtii, AI

ReschEsser, U

Springer, C

Richter, W

Schmidt, WG

Bechstedt, F

DelSole, R

机构：

[1] UNIV JENA,INST FESTKORPERTHEORIE & THEORET OPT,D-07743 JENA,GERMANY

[2] UNIV ROMA TOR VERGATA,INST NAZL FIS MAT,DIPARTMENTO FIS,I-00133 ROME,ITALY

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.77.4402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The microscopic structure of the Sb stabilized GaAs(100)-(2 x 4) surfaces is investigated combining reflectance anisotropy spectroscopy with first-principles total energy minimization and tight-binding calculations of optical properties. We show that the model accepted so far, containing three Sb dimers in the outermost layer, is not a stable surface geometry. Our results reveal a coexistence of Sb and Ga dimers on the Sb-stabilized (2 x 4) surface.

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收藏

页码：4402 / 4405

页数：4

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