Direct-indirect crossover in GaxIn1-xP alloys

被引：17

作者：

Alberi, K. ^{[1
]}

Fluegel, B. ^{[1
]}

Steiner, M. A. ^{[1
]}

France, R. ^{[1
]}

Olavarria, W. ^{[1
]}

Mascarenhas, A. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 11期

关键词：

QUASI-DIRECT TRANSITIONS; LUMINESCENCE PROCESSES; IN1-XGAXP ALLOYS; BAND-STRUCTURE; PHOTOLUMINESCENCE;

D O I：

10.1063/1.3663439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energy and composition of the direct to indirect bandgap crossover in GaxIn1-xP significantly influences its potential for optoelectronic devices, such as solar cells and light emitting diodes, however considerable discrepancies still remain in the literature with regard to the precise value of the crossover composition x(c). We revisit this issue in GaxIn1-xP films epitaxially grown on GaAs substrates. Observation of concurrent yet distinct direct and indirect transitions in Ga0.719In0.281P at 2 K using time integrated and time resolved photoluminescence studies places the crossover very near the composition x(C) = 0.71. (C) 2011 American Institute of Physics. [doi:10.1063/1.3663439]

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页数：5

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