Auger losses in GaN-based quantum wells: Microscopic theory

被引：19

作者：

Pasenow, B. ^{[1
]}

Koch, S. W. ^{[1
]}

Hader, J. ^{[2
,3
]}

Moloney, J. V. ^{[2
,3
]}

Sabathil, M. ^{[4
]}

Linder, N. ^{[4
]}

Lutgen, S. ^{[4
]}

机构：

[1] Univ Marburg, Dep Phys & Mat Sci Ctr, Renthof 5, D-35032 Marburg, Germany

[2] Nonlinear Control Strategies Inc, Tucson, AZ 85705 USA

[3] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA

[4] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

LIGHT-EMITTING-DIODES; SEMICONDUCTOR-LASERS; RECOMBINATION;

D O I：

10.1002/pssc.200880865

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Fully microscopic many-body models are used to study the importance of radiative and Auger carrier losses in InGaN/GaN quantum wells. Since the usual direct band-to-band Auger losses are too small to explain the experimentally observed droop of the external quantum efficiency in such structures, phonon assisted Auger processes are discussed. First numerical estimates indicate that the resulting losses constitute an important intrinsic loss process in InGaN/GaN quantum wells. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S864 / S868

页数：5

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