Morphology of multilayer Ag/Ag(100) films versus deposition temperature: STM analysis and atomistic lattice-gas modeling

被引:53
作者
Caspersen, KJ
Stoldt, CR
Layson, AR
Bartelt, MC
Thiel, PA
Evans, JW
机构
[1] Iowa State Univ, Dept Chem, Ames, IA 50011 USA
[2] Iowa State Univ, Ames Lab, Ames, IA 50011 USA
[3] Lawrence Livermore Natl Lab, Dept Chem & Mat Sci, Livermore, CA 94550 USA
[4] Iowa State Univ, Dept Math, Ames, IA 50011 USA
来源
PHYSICAL REVIEW B | 2001年 / 63卷 / 08期
关键词
D O I
10.1103/PhysRevB.63.085401
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Scanning tunneling microscopy is used to analyze the nanoscale morphology of 25 ML films of Ag deposited on Ag(100) at temperatures (T) between 55 and 300 K. A transition from self-affine growth to "mound formation" occurs as T increases above: about 140 K. The roughness decreases with increasing T up until 140 K in the self-affine growth regime, and then increases until about 210 K before decreasing again in the mounding regime. We analyze mounding behavior via a lattice-gas model incorporating: downward funneling of depositing atoms from step edges to lower fourfold hollow adsorption sites; terrace diffusion of adatoms with a barrier of 0.40 eV leading to irreversible island formation in each layer; efficient transport of adatoms along island edges to kink sites, and downward thermal transport of adatoms inhibited by a step-edge barrier of 0.06-0.07 eV along close-packed step edges (but with no barrier along kinked or open steps). This model reasonably recovers the T-dependence of not just the roughness, but also of the mound slopes and lateral dimensions above 190 K. To accurately describe lateral dimensions, an appropriate treatment of the intralayer merging of growing islands is shown to be critical. To describe behavior below 190 K, one must account for inhibited rounding of kinks by adatoms at island edges, as this controls island shapes, and thus the extent of open steps and of easy downward transport. Elsewhere. we describe the low-T regime of self-affine growth (with no terrace diffusion) accounting for a breakdown of the simple downward funneling picture.
引用
收藏
页数:15
相关论文
共 60 条
[41]   Coarsening dynamics of crystalline thin films [J].
Siegert, M .
PHYSICAL REVIEW LETTERS, 1998, 81 (25) :5481-5484
[42]   Using temperature to tune film roughness: Nonintuitive behavior in a simple system [J].
Stoldt, CR ;
Caspersen, KJ ;
Bartelt, MC ;
Jenks, CJ ;
Evans, JW ;
Thiel, PA .
PHYSICAL REVIEW LETTERS, 2000, 85 (04) :800-803
[43]   Evolution of far-from-equilibrium nanostructures formed by cluster-step and cluster-cluster coalescence in metal films [J].
Stoldt, CR ;
Cadilhe, AM ;
Jenks, CJ ;
Wen, JM ;
Evans, JW ;
Thiel, PA .
PHYSICAL REVIEW LETTERS, 1998, 81 (14) :2950-2953
[44]  
STOLDT CR, 2000, MRS P, V619
[45]   COARSENING OF UNSTABLE SURFACE-FEATURES DURING FE(001) HOMOEPITAXY [J].
STROSCIO, JA ;
PIERCE, DT ;
STILES, MD ;
ZANGWILL, A ;
SANDER, LM .
PHYSICAL REVIEW LETTERS, 1995, 75 (23) :4246-4249
[46]   Noise-assisted mound coarsening in epitaxial growth [J].
Tang, LH ;
Smilauer, P ;
Vvedensky, DD .
EUROPEAN PHYSICAL JOURNAL B, 1998, 2 (03) :409-412
[47]   STEP FORMATION ON THE ION-BOMBARDED AG(100) SURFACE STUDIED BY LEED AND MONTE-CARLO SIMULATIONS [J].
TEICHERT, C ;
AMMER, C ;
KLAUA, M .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1994, 146 (01) :223-242
[48]   Nucleation, growth, and relaxation of thin Films: Metal(100) homoepitaxial systems [J].
Thiel, PA ;
Evans, JW .
JOURNAL OF PHYSICAL CHEMISTRY B, 2000, 104 (08) :1663-1676
[49]   DYNAMIC EVOLUTION OF PYRAMID STRUCTURES DURING GROWTH OF EPITAXIAL FE(001) FILMS [J].
THURMER, K ;
KOCH, R ;
WEBER, M ;
RIEDER, KH .
PHYSICAL REVIEW LETTERS, 1995, 75 (09) :1767-1770
[50]   SURFACE-MORPHOLOGY DURING MULTILAYER EPITAXIAL-GROWTH OF GE(001) [J].
VANNOSTRAND, JE ;
CHEY, SJ ;
HASAN, MA ;
CAHILL, DG ;
GREENE, JE .
PHYSICAL REVIEW LETTERS, 1995, 74 (07) :1127-1130