Simple fabrication of Mg2Si thermoelectric generator

被引：23

作者：

Hosono, T ^{[1
]}

Matsuzawa, Y ^{[1
]}

Kuramoto, M ^{[1
]}

Momose, Y ^{[1
]}

Tatsuoka, H ^{[1
]}

Kuwabara, H ^{[1
]}

机构：

[1] Shizuoka Univ, Fac Engn, Hamamatsu, Shizuoka 4328561, Japan

来源：

POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS | 2003年 / 93卷

关键词：

interdiffusion; isothermal growth; silicide; thermoelectric device; transmission electron microscopy;

D O I：

10.4028/www.scientific.net/SSP.93.447

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mg2Si polycrystals have been grown by heat treatment of bulk Si under Mg vapor. The structural property of the Mg2Si has been investigated. The Mg2Si shows n-type conduction. The impurity doping to obtain p-Mg2Si was also demonstrated. In addition, simple fabrication procedure of Mg2Si thermoelectric generators has been developed.

引用

页码：447 / 451

页数：5

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