Long-wavelength strained quantum-well lasers oscillating up to 210 °C on InGaAs ternary substrates

被引：32

作者：

Otsubo, K ^{[1
]}

Shoji, H ^{[1
]}

Kusunoki, T ^{[1
]}

Suzuki, T ^{[1
]}

Uchida, T ^{[1
]}

Nishijima, Y ^{[1
]}

Nakajima, K ^{[1
]}

Ishikawa, H ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, RWCP Opt Interconnect, Atsugi, Kanagawa 2430197, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 08期

关键词：

crystal growth; indium compounds; quantum-well lasers; semiconductor growth; semiconductor lasers; semiconductor materials; temperature;

D O I：

10.1109/68.701506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Long-wavelength InGaAs-InAlGaAs strained quantum-well lasers have been fabricated on In0.22Ga0.78As ternary substrates grown by the Bridgman method. The threshold current density and lasing wavelength at 20 degrees C are 245 A/cm(2) and 1.226 mu m, respectively, The device has lased up to 210 degrees C, which is the highest operating temperature ever reported for long-wavelength semiconductor lasers, The temperature sensitivity of the slope efficiency between 20 degrees C and 120 degrees C is only -0.0051 dB/K, showing suppressed carrier overflow owing to deep potential quantum wells. These high-temperature durabilities of this laser are fascinating features for application to optical subscriber and optical interconnection systems.

引用

页码：1073 / 1075

页数：3

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