Development of the Cat-CVD apparatus and its feasibility for mass production

被引：24

作者：

Ishibashi, K ^{[1
]}

机构：

[1] Anelva Corp, Proc Dev Lab, Fuchu, Tokyo 1838508, Japan

来源：

THIN SOLID FILMS | 2001年 / 395卷 / 1-2期

关键词：

chemical vapor deposition; deposition process; silicon;

D O I：

10.1016/S0040-6090(01)01207-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Key issues in the development of the catalytic chemical vapor deposition (Cat-CVD) apparatus for mass production were discussed. Particularly, issues such as suppression of metal impurity contamination, control of substrate temperature independent of heat radiation from the catalyzer, arrangement and attachment of catalyzer, geometrical layout of the catalyzers for uniform distribution of film thickness, and in situ cleaning methods were discussed for the purpose of developing the apparatus. In addition, practical measures for each issue were demonstrated and their feasibility for mass production were briefly mentioned. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：55 / 60

页数：6

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