Effects of low temperature buffer layer treatments on the growth of high quality ZnO films

被引：9

作者：

Tampo, H ^{[1
]}

Yamada, A ^{[1
]}

Fons, P ^{[1
]}

Shibata, H ^{[1
]}

Matsubara, K ^{[1
]}

Wata, K ^{[1
]}

Nakahara, K ^{[1
]}

Niki, S ^{[1
]}

机构：

[1] AIST, Tsukuba, Ibaraki 3058568, Japan

来源：

11TH INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS (II-VI 2003), PROCEEDINGS | 2004年 / 1卷 / 04期

关键词：

D O I：

10.1002/pssc.200304188

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO films were grown on sapphire substrates by radical source molecular beam epitaxy (RS-MBE). ZnO low temperature buffer layers were subjected to various treatments. High quality ZnO films were obtained by vacuum annealing plus nitrogen doping of the buffer layer. The carrier concentration of the ZnO film fabricated using this buffer layer was 7.5 x 10(16) cm(-3) with a mobility of 132 cm(2)/V see at RT. Temperature dependent Hall measurements showed implied the existence of degenerate (untreated) buffer layers. Using a nitrogen-doped buffer layer to reduce the influence of the degenerate layer, a donor energy of 110 meV was estimated from temperature dependent Hall measurements. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：888 / 891

页数：4

共 17 条

[11] Growth of N-doped and Ga plus N-codoped ZnO films by radical source molecular beam epitaxy [J].