Deposition conditions of SrTiO3 films on various substrates by CVD and their dielectric properties

被引：7

作者：

Funakubo, H

Takeshima, Y

Nagano, D

Saiki, A

Shinozaki, K

Mizutani, N

机构：

[1] Tokyo Inst Technol, Fac Engn, Dept Inorgan Mat, Meguro Ku, Tokyo 152, Japan

[2] Murata Mag Co Ltd, Funct Mat Res Dev, R&D Grp, Siga 52023, Japan

来源：

THIN SOLID FILMS | 1998年 / 334卷 / 1-2期

关键词：

strontium titanate; orientation; dielectric property;

D O I：

10.1016/S0040-6090(98)01119-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SrTiO3 films were prepared on (100)Pt//(100)MgO and (111)Pt/glass substrates by CVD using Sr(C11H19O2)(2)-Ti(O . i-C3H7)(4)-O-2 system. Epitaxially grown film was deposited on (100)Pt//(100)MgO substrate at 800 degrees C, (100)SrTiO3//(100)Pt//(100)MgO. On the other hand, (110)-one axis oriented film was deposited on (111)Pt/glass substrate. These films were made up of columnar grains grown normal to the surface of the substrate. The dielectric constant (epsilon(r)) of these films were approx. 220-240 and decreased to 90% with increasing temperature from 20 to 130 degrees C. Their dispersion factors were within 0.5-1.5%. The epsilon(r) of the films deposited at 730 degrees C was approx. 30 for both films and was approximately one-seventh smaller than that deposited at 800 degrees C. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：71 / 76

页数：6

共 21 条

[1] MEASUREMENT AND THERMODYNAMIC ANALYSES OF THE DIELECTRIC-CONSTANT OF EPITAXIALLY GROWN SRTIO3 FILMS [J].