Controlling the native stacking fault density in II-VI/III-V heterostructures

被引：11

作者：

Colli, A

Pelucchi, E

Franciosi, A

机构：

[1] INFM, Lab Nazl TASC, I-34012 Trieste, Italy

[2] Univ Trieste, Dipartmento Fis, I-34127 Trieste, Italy

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 01期

关键词：

D O I：

10.1063/1.1589195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We performed a systematic study of the native stacking fault density in ZnSe/GaAs(001) heterostructures implemented using several of the interface fabrication procedures proposed in the literature. Only two of the procedures examined reproducibly lead to stacking fault densities below 10(4) cm(-2). Despite the apparent differences, the two procedures were found to yield quantitatively similar defect densities, and qualitatively similar interface compositions and band alignments. (C) 2003 American Institute of Physics.

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页码：81 / 83

页数：3

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