Investigation of the early stages of ZnSe epitaxy on GaAs(001) via scanning tunneling microscopy

被引：16

作者：

Ahsan, S ^{[1
]}

Kahn, A ^{[1
]}

Pashley, MD ^{[1
]}

机构：

[1] PHILIPS RES LABS,BRIARCLIFF MANOR,NY 10510

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 15期

关键词：

D O I：

10.1063/1.119373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a scanning tunneling microscopy (STM) study of the initial stages of ZnSe deposition on the GaAs(001)-(2 X 4) surface. The deposition of elemental Se and of ZnSe an the bare GaAs surface induces considerable atomic disorder attributed to the Se-As exchange reaction. The deposition of elemental Zn weakens the 2X periodicity of the surface but induces no apparent changes in the STM images of the As dimers. Comparison of STM images of submonolayers of ZnSe on GaAs with and without a Zn pretreatment suggests that Zn reduces the interaction of Se with the GaAs surface. (C) 1997 American Institute of Physics.

引用

页码：2178 / 2180

页数：3

共 21 条

[1]

BRATINA G, 1996, J VAC SCI TECHNOL B, V14, P3967

[2] Reduction of structural defects in II-VI blue green laser diodes [J].

Chu, CC ;

Ng, TB ;

Han, J ;

Hua, GC ;

Gunshor, RL ;

Ho, E ;

Warlick, EL ;

Kolodziejski, LA ;

Nurmikko, AV .

APPLIED PHYSICS LETTERS, 1996, 69 (05) :602-604

[3] STRUCTURAL-PROPERTIES OF ZNSE FILMS GROWN BY MIGRATION ENHANCED EPITAXY [J].

GAINES, JM ;

PETRUZZELLO, J ;

GREENBERG, B .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (06) :2835-2840

[4] SE-RICH PHASE OF ZNSE(100) PREDICTED BY TOTAL-ENERGY CALCULATIONS [J].

GARCIA, A ;

NORTHRUP, JE .

APPLIED PHYSICS LETTERS, 1994, 65 (06) :708-710

[5] STRUCTURAL QUALITY AND THE GROWTH MODE IN EPITAXIAL ZNSE/GAAS(100) [J].

GUHA, S ;

MUNEKATA, H ;

CHANG, LL .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (05) :2294-2300

[6] DEGRADATION OF II-VI BASED BLUE-GREEN LIGHT EMITTERS [J].

GUHA, S ;

DEPUYDT, JM ;

HAASE, MA ;

QIU, J ;

CHENG, H .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3107-3109

[7] BLUE-GREEN LASER-DIODES [J].

HAASE, MA ;

QIU, J ;

DEPUYDT, JM ;

CHENG, H .

APPLIED PHYSICS LETTERS, 1991, 59 (11) :1272-1274

[8] Zn preadsorption on GaAs(100)2x4 prior to ZnSe growth [J].

Heun, S ;

Paggel, JJ ;

Rubini, S ;

Franciosi, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04) :2980-2984

[9] ZNCDSE/ZNSSE/ZNMGSSE SCH LASER-DIODE WITH A GAAS BUFFER LAYER [J].

ITOH, S ;

NAKAYAMA, N ;

MATSUMOTO, S ;

NAGAI, M ;

NAKANO, K ;

OZAWA, M ;

OKUYAMA, H ;

TOMIYA, S ;

OHATA, T ;

IKEDA, M ;

ISHIBASHI, A ;

MORI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (7A) :L938-L940

[10]

Kuo LH, 1996, APPL PHYS LETT, V68, P2413, DOI 10.1063/1.116151

← 1 2 3 →