Focused ion beam applications to solid state devices

被引:136
作者
Matsui, S
Ochiai, Y
机构
[1] Fundamental Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305
关键词
D O I
10.1088/0957-4484/7/3/013
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The current state of focused ion beam (FIB) applications in relation to solid state devices is reviewed, and recent use of FIB technology for lithography, etching, deposition, and doping are described. Etching and deposition have become essential processes for failure analysis and for mask repair in silicon ULSL production. Furthermore, the FIB doping technique has been used to fabricate quantum effect devices.
引用
收藏
页码:247 / 258
页数:12
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