Bi3.25La0.75Ti3O12 thin films prepared on Si (100) by metalorganic decomposition method

Bi3.25La0.75Ti3O12 (BLT) thin films have been grown on n-type Si (100) substrates by metalorganic decomposition method. The structural properties of the films were examined by x-ray diffraction. The BLT films exhibit good insulating property with room temperature resistivities in the range of 10(12)-10(13) Ohm cm. The current-voltage characteristics show ohmic conductivity in the lower voltage range and space-charge-limited conductivity in the higher voltage range. The capacitance-voltage characteristic hysteresis curves show that the metal-ferroelectric-semiconductor structure has memory effect. The fixed charge density and the surface state density were also calculated. The results obtained indicate that the present BLT films are suitable for making ferroelectric field effect transistor memories. (C) 2001 American Institute of Physics.