Determination of lattice parameters in the epitaxial AlSb/GaSb system by high resolution X-ray diffraction

被引：18

作者：

Bocchi, C ^{[1
]}

Bosacchi, A ^{[1
]}

Ferrari, C ^{[1
]}

Franchi, S ^{[1
]}

Franzosi, P ^{[1
]}

Magnanini, R ^{[1
]}

Nasi, L ^{[1
]}

机构：

[1] UNIV PARMA,DEPT PHYS,I-43100 PARMA,ITALY

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 165卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(96)00148-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

(001)-oriented AlSb/GaSb heterostructures grown by molecular beam epitaxy under optimized conditions have been studied by high resolution X-ray diffraction (HRXRD) in order to measure the lattice parameter a(AlSb) and the Poisson ratio nu(AlSb)([001]) of epitaxial AlSb with high accuracy. The knowledge of these parameters is a prerequisite for the measurement of the composition of Al1-xGaxSb ternary solutions by means of X-ray diffractometry, The thicknesses of AlSb layers have been chosen so as to result in pseudomorphic and almost completely relaxed layers, The HRXRD investigations have been carried out using the 004, 335 and 117 reflecting planes, as well as the near vertical 551 reflecting planes, with a symmetrical beam path, which give high sensitivity to the parallel component of mismatch. The data on epitaxial AlSb (a(AlSb) = 6.1353+/-0.0003 Angstrom and nu(AlSb)([001]) = 0.328+/-0.005) are in excellent agreement with the previously published data, but have better accuracy and reliability.

引用

页码：8 / 14

页数：7

共 17 条

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