Electrical Properties of p-Si/n-ZnO Nanowires Heterojunction Devices

被引：22

作者：

Al-Heniti, S. ^{[1
]}

Badran, R. I. ^{[1
,2
]}

Al-Ghamedi, A. A. ^{[1
]}

Ai-Agel, F. A. ^{[1
]}

机构：

[1] King Abdulaziz Univ, Fac Sci, Dept Phys, Jeddah, Saudi Arabia

[2] Hashemite Univ, Dept Phys, Zarqa, Jordan

来源：

ADVANCED SCIENCE LETTERS | 2011年 / 4卷 / 01期

关键词：

ZnO; Nanowires; Photoluminescence; Heterojunction Diodes; OPTICAL-PROPERTIES; THERMAL EVAPORATION; ANISOTROPIC GROWTH; SCHOTTKY DIODES; MECHANISM; PHOTOLUMINESCENCE; HETEROSTRUCTURES; NANOSHEETS; NANOBELTS; NANORODS;

D O I：

10.1166/asl.2011.1196

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

This paper explores the temperature dependent heterojunction behavior of n-type zinc oxide (ZnO) nanowires/p-Si diodes. The device behavior at different temperatures in forward as well as reverse biased conditions are studied and reported. From the detailed electrical properties, it is confirmed that the fabricated p-n diode showed a good stability over the temperature range of 25-130 degrees C. The turn-on and breakdown voltage of the device slightly decreases with an increase of temperature whereas the saturation current of the device increases. The effective potential barrier height is found increasing with the increase in temperature. The quality factor is found with and without the consideration of barrier height inhomogenity. The mean potential barrier is also determined. Moreover, a value of activation energy of 53 meV which is close to the exciton binding energy of ZnO, is estimated.

引用

页码：24 / 28

页数：5

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