GaN, ZnO and InN nanowires and devices

被引：43

作者：

Pearton, S. J. ^{[1
]}

Kang, B. S. ^{[1
]}

Gila, B. P. ^{[1
]}

Norton, D. P. ^{[1
]}

Kryliouk, O. ^{[2
]}

Ren, F. ^{[2
]}

He, Young-Woo ^{[3
]}

Chang, Chih-Yang ^{[4
]}

Chi, Gou-Chung ^{[4
]}

Wang, Wei-Ming ^{[5
]}

Chen, Li-Chyong ^{[5
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[3] Kyungpook Natl Univ, Dept Inorgan Mat & Engn, Taegu 702701, South Korea

[4] Natl Cent Univ, Dept Phys, Jhongli 320, Taiwan

[5] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2008年 / 8卷 / 01期

关键词：

InN; GaN; ZnO; nanowires;

D O I：

10.1166/jnn.2008.N01

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A brief review is given of recent developments in wide bandgap semiconductor nanowire synthesis and devices fabricated on these nanostructures. There is strong interest in these devices for applications in UV detection, gas sensors and transparent electronics.

引用

页码：99 / 110

页数：12

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