Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors

被引：183

作者：

Lee, Sungsik ^{[1
]}

Ghaffarzadeh, Khashayar ^{[1
]}

Nathan, Arokia ^{[1
]}

Robertson, John ^{[2
]}

Jeon, Sanghun ^{[3
]}

Kim, Changjung ^{[3
]}

Song, I-Hun ^{[3
]}

Chung, U-In ^{[3
]}

机构：

[1] UCL, London Ctr Nanotechnol, London WC1H 0AH, England

[2] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

[3] Samsung Adv Inst Technol, Yongin 449712, Gyeonggi Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 20期

关键词：

MODEL; CRYSTALLINE; EXTRACTION; MOBILITY; SILICON;

D O I：

10.1063/1.3589371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron conduction mechanism in the above-threshold regime in amorphous oxide semiconductor thin film transistors is shown to be controlled by percolation and trap-limited conduction. The band tail state slope controls the field effect mobility, while the average spatial coherence length and potential fluctuation control percolation conduction. In these limits, the field effect mobility is found to follow a power law, from which a universal mobility versus carrier concentration dependence is extracted. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3589371]

引用

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