Layer-by-layer growth of MgO thin films controlled by inserting a TiN seed layer using an in-situ pulsed laser deposition

被引：18

作者：

Chen, TL ^{[1
]}

Li, XM ^{[1
]}

Yu, WD ^{[1
]}

Zhang, X ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 81卷 / 03期

关键词：

D O I：

10.1007/s00339-004-2712-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Completely (200)-oriented MgO films were grown on Si(100) with insertion of a TiN seed layer by pulsed laser deposition (PLD). Compared with the conventional direct ablation of a metal Mg or ceramic MgO target, we successfully demonstrated an effective way to improve the crystallinity of MgO thin films. By using TiN as a seed layer, high-quality MgO films with an atomic-scale smooth surface of about 0.55 nm (Ra) were obtained. Moreover, it is found that the quality of MgO films was independent of the thickness of the TiN seed layer. The improved crystalline quality of the MgO films was attributed to the layer-by-layer growth mode during the deposition of MgO films, which was monitored in-situ by reflection high energy electron diffraction (RHEED).

引用

页码：657 / 661

页数：5

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