Semiconducting oxide heterostructures

被引：7

作者：

Brandt, Matthias ^{[1
]}

von Wenckstern, Holger ^{[1
]}

Stoelzel, Marko ^{[1
]}

Hochmuth, Holger ^{[1
]}

Lorenz, Michael ^{[1
]}

Grundmann, Marius ^{[1
]}

机构：

[1] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 01期

关键词：

ZNO THIN-FILMS; MOLECULAR-BEAM EPITAXY; 2-DIMENSIONAL ELECTRON-GAS; FIELD-EFFECT TRANSISTOR; STEP-FLOW GROWTH; QUANTUM CONFINEMENT; CRYSTALLOGRAPHIC POLARITY; SAPPHIRE SUBSTRATE; OPTICAL-PROPERTIES; AB-INITIO;

D O I：

10.1088/0268-1242/26/1/014040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The properties of semiconducting oxide heterostructures are demonstrated using ZnO and its ternary alloy MgxZn1-xO as a model system. This system is of particular importance, as it shows by far the most detailed research activities among oxide semiconductors. MgxZn1-xO can be grown pseudomorphically on single crystalline ZnO in the step flow growth mode yielding atomically flat surfaces. In such structures, a two-dimensional electron gas was detected with an areal concentration of up to n(2d) = 3.9 x 10(13) cm(-2). The quantum Hall effect was observed in ZnO/MgxZn1-xO single heterostructures, the first oxide system ever to show the quantum Hall effect. Likewise, quantization plays a dominating role in double heterostructures of ZnO and MgxZn1-xO. Quantum confinement and the quantum-confined Stark effect were observed in ZnO/MgxZn1-xO quantum wells grown by MBE and also by PLD. Finally, the ability to induce and control quantized states in ZnO/MgxZn1-xO heterostructures was combined with the extraordinary properties of one-dimensional nanostructures, thus resulting in nano-sized building blocks.

引用

页数：9

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