Determination of Carrier Type Doped from Metal Contacts to Graphene by Channel-Length-Dependent Shift of Charge Neutrality Points

被引：32

作者：

Nouchi, Ryo ^{[1
]}

Saito, Tatsuya ^{[2
]}

Tanigaki, Katsumi ^{[1
,2
]}

机构：

[1] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808578, Japan

[2] Tohoku Univ, Grad Sch Sci, Dept Phys, Sendai, Miyagi 9808578, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 03期

关键词：

TRANSPORT; SURFACES; GRAPHITE; DEVICES; ENERGY; FILMS;

D O I：

10.1143/APEX.4.035101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method for determining the type of charge carrier, electron or hole, which is transferred from metal contacts to graphene, is described. The Dirac point is found to shift toward more negative (positive) gate voltages for electron (hole) doping by shortening of the interelectrode spacing. The shift of the Dirac point is accompanied by an enhancement of the electron-hole conductivity asymmetry. Experimentally determined carrier types may be explained in terms of the metal work functions modified by interactions with graphene. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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