Determining 4H silicon carbide electronic properties through combined use of device simulation and metal-semiconductor field-effect-transistor terminal characteristics

被引:31
作者
Huang, MW [1 ]
Goldsman, N
Chang, CH
Mayergoyz, I
McGarrity, JM
Woolard, D
机构
[1] Univ Maryland, Dept Elect Engn, College Pk, MD 20742 USA
[2] USA, Res Lab, Adelphi, MD 20783 USA
关键词
D O I
10.1063/1.368267
中图分类号
O59 [应用物理学];
学科分类号
摘要
A two-dimensional numerical device simulator has been developed specially for the recessed gate 4H silicon carbide(4H-SiC) metal-semiconductor field-effect-transistor (MESFET). By combining numerical techniques, material physics, and measured device characteristics, we are able to use the simulator to extract more information about the new material 4H-SiC, including the mobility, velocity-field curves, and the Schottky barrier height. We have also enabled and used the new simulator to investigate breakdown voltage and thus predict operation limitations of the 4H-SiC device. Simulations indicate that impact ionization is relatively small in 4H-SiC, thereby leading to a very high breakdown voltage of 125 V in a 0.7 mu m gate MESFET. (C) 1998 American Institute of Physics. [S0021-8979(98)06516-5].
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收藏
页码:2065 / 2070
页数:6
相关论文
共 32 条
[11]   A GLOBALLY CONVERGENT ALGORITHM FOR THE SOLUTION OF THE STEADY-STATE SEMICONDUCTOR-DEVICE EQUATIONS [J].
KORMAN, CE ;
MAYERGOYZ, ID .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (03) :1324-1334
[12]   SOLUTION OF THE NONLINEAR POISSON EQUATION OF SEMICONDUCTOR-DEVICE THEORY [J].
MAYERGOYZ, ID .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :195-199
[13]   4H-SiC MESFET with 65.7% power added efficiency at 850 MHz [J].
Moore, KE ;
Weitzel, CE ;
Nordquist, KJ ;
Pond, LL ;
Palmour, JW ;
Allen, S ;
Carter, CH .
IEEE ELECTRON DEVICE LETTERS, 1997, 18 (02) :69-70
[14]  
Muller R. S., 1986, DEVICE ELECT INTEGRA
[15]   Monte Carlo simulation of electron transport in 4H-SiC using a two-band model with multiple minima [J].
Nilsson, HE ;
Sannemo, U ;
Petersson, CS .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) :3365-3369
[16]   COMPUTER-SIMULATIONS OF SCHOTTKY CONTACTS WITH A NON-CONSTANT RECOMBINATION VELOCITY [J].
NYLANDER, JO ;
MASSZI, F ;
SELBERHERR, S ;
BERG, S .
SOLID-STATE ELECTRONICS, 1989, 32 (05) :363-367
[17]   Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap [J].
Persson, C ;
Lindefelt, U .
PHYSICAL REVIEW B, 1996, 54 (15) :10257-10260
[18]   SIC DEVICES - PHYSICS AND NUMERICAL-SIMULATION [J].
RUFF, M ;
MITLEHNER, H ;
HELBIG, R .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (06) :1040-1054
[19]   ANISOTROPY OF THE ELECTRON HALL-MOBILITY IN 4H, 6H, AND 15R SILICON-CARBIDE [J].
SCHADT, M ;
PENSL, G ;
DEVATY, RP ;
CHOYKE, WJ ;
STEIN, R ;
STEPHANI, D .
APPLIED PHYSICS LETTERS, 1994, 65 (24) :3120-3122
[20]  
SCHAFFER WJ, 1994, MATER RES SOC SYMP P, V339, P595, DOI 10.1557/PROC-339-595