Evidence for identification of the divacancy-oxygen center in Si

被引：49

作者：

Alfieri, G

Monakhov, EV

Avset, BS

Svensson, BG

机构：

[1] Univ Oslo, Dept Phys, N-0316 Oslo, Norway

[2] SINTEF, Elect & Cybernet, N-0314 Oslo, Norway

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.68.233202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A deep level transient spectroscopy (DLTS) study of electronic defect levels in 15 MeV electron irradiated n-type float-zone Si samples with different oxygen contents has been performed. Heat treatment at 250 degreesC results in a shift of both the singly negative and doubly negative divacancy (V-2) related DLTS peaks. This is due to annealing of V-2 and the formation of a new double acceptor center. The formation of the new center has a close one-to-one correlation with the annealing of V-2. The annealing rate of V-2 and the formation rate of the new center are close to proportional with the oxygen content in the samples. The new center is identified as a divacancy-oxygen complex.

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页数：4

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