Temperature dependence of threshold voltage of metal-semiconductor field effect transistors in the presence of an uneven distribution of interface and bulk states

The temperature dependence of threshold voltage of metal-semiconductor field effect transistors is studied considering a generalised interface state model and an uneven distribution of interface and bulk impurity states. The analysis predicts a sharp variation of threshold voltage with temperature. which is in contrast to the conventionally known temperature dependence due to the band gap energy. The theoretical results are found in agreement with previous experimental findings.