EFFECT OF LOCALIZED STATES ON THE ELECTRICAL CHARACTERISTICS OF METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：10

作者：

CHATTOPADHYAY, P

PAL, J

机构：

[1] Department of Electronic Science, University College of Science, Calcutta

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1995年 / 147卷 / 02期

关键词：

D O I：

10.1002/pssa.2211470234

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical characteristics of MESFETS are studied by considering the effect of localized states at the gate-substrate interface. It is seen that in presence of a high density of localized states, the I(d) - U(d) characteristics become independent of gate bias. This signifies the importance of Fermi level pinning in these structures. An expression for the threshold voltage is derived which is a function of the doping concentration, drain voltage, and the interface parameters, namely, the density of localized states, the neutral level energy, and the thickness of the interfacial oxide layer.

引用

收藏

页码：633 / 642

页数：10

相关论文

共 21 条

[1] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].

BARDEEN, J .

PHYSICAL REVIEW, 1947, 71 (10) :717-727

[2] ALUMINUM-SILICON SCHOTTKY BARRIERS AND OHMIC CONTACTS IN INTEGRATED-CIRCUITS [J].

CARD, HC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (06) :538-544

[3] AN IMPROVED MODEL OF ION-IMPLANTED GAAS OPFET [J].

CHAKRABARTI, P ;

SHRESTHA, NL ;

SRIVASTAVA, S ;

KHEMKA, V .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) :2050-2059

[4] ON THE BARRIER HEIGHT OF A METAL-SEMICONDUCTOR CONTACT WITH A THIN INTERFACIAL LAYER [J].

CHATTOPADHYAY, P ;

DAW, AN .

SOLID-STATE ELECTRONICS, 1985, 28 (08) :831-836

[5] EXPERIMENTAL INVESTIGATION OF THE DEPENDENCE OF BARRIER HEIGHT ON METAL WORK FUNCTION FOR METAL-SIO2-P-SI (MIS) SCHOTTKY-BARRIER DIODES IN THE PRESENCE OF INVERSION [J].

CHATTOPADHYAY, P ;

KUMAR, V .

SOLID-STATE ELECTRONICS, 1988, 31 (02) :143-146

[6] ON THE CURRENT TRANSPORT MECHANISM IN A METAL-INSULATOR SEMICONDUCTOR (MIS) DIODE [J].

CHATTOPADHYAY, P ;

DAW, AN .

SOLID-STATE ELECTRONICS, 1986, 29 (05) :555-560

[7] A NOVEL LOW RESISTIVE METAL-INSULATOR-SEMICONDUCTOR (MIS) INVERSION LAYER SOLAR-CELL STRUCTURE [J].

CHATTOPADHYAY, P .

SOLID-STATE ELECTRONICS, 1988, 31 (11) :1641-1643

[8]

CHATTOPADHYAY P, IN PRESS SOLID STATE

[9] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[10] ON THE DETERMINATION OF THE NEUTRAL LEVEL AND CHARGE-DENSITY IN THE INTERFACIAL LAYER OF A MIS DIODE [J].

DAW, AN ;

DATTA, AK ;

ASH, MC .

SOLID-STATE ELECTRONICS, 1982, 25 (05) :431-432