EXPERIMENTAL INVESTIGATION OF THE DEPENDENCE OF BARRIER HEIGHT ON METAL WORK FUNCTION FOR METAL-SIO2-P-SI (MIS) SCHOTTKY-BARRIER DIODES IN THE PRESENCE OF INVERSION

被引：8

作者：

CHATTOPADHYAY, P

KUMAR, V

机构：

[1] Indian Inst of Science, Bangalore, India, Indian Inst of Science, Bangalore, India

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 02期

关键词：

D O I：

10.1016/0038-1101(88)90121-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：143 / 146

页数：4

共 13 条

[1] ON THE CONDITION OF INVERSION IN AN MIS TUNNEL STRUCTURE [J].

ASH, MC ;

DAW, AN .

SOLID-STATE ELECTRONICS, 1986, 29 (09) :991-994

[2] ALUMINUM-SILICON SCHOTTKY BARRIERS AND OHMIC CONTACTS IN INTEGRATED-CIRCUITS [J].

CARD, HC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (06) :538-544

[3] ON THE CURRENT TRANSPORT MECHANISM IN A METAL-INSULATOR SEMICONDUCTOR (MIS) DIODE [J].

CHATTOPADHYAY, P ;

DAW, AN .

SOLID-STATE ELECTRONICS, 1986, 29 (05) :555-560

[4] EFFECT OF SURFACE-STATES ON THE BARRIER HEIGHT IN A MIS DIODE IN THE PRESENCE OF INVERSION [J].

CHATTOPADHYAY, P ;

DAW, AN .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1985, 58 (05) :775-779

[5]

CHATTOPADHYAY P, 1986, J I ELECTRON TELECOM, V32, P69

[6]

CHATTOPADHYAY P, 1984, SOLID ST ELECTRON, V27, P1057

[7] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[8] ON THE DETERMINATION OF THE NEUTRAL LEVEL AND CHARGE-DENSITY IN THE INTERFACIAL LAYER OF A MIS DIODE [J].

DAW, AN ;

DATTA, AK ;

ASH, MC .

SOLID-STATE ELECTRONICS, 1982, 25 (05) :431-432

[9] THE BARRIER HEIGHT CHANGE AND CURRENT TRANSPORT PHENOMENA WITH THE PRESENCE OF INTERFACIAL LAYER IN MIS SCHOTTKY-BARRIER SOLAR-CELLS [J].

LUE, JT .

SOLID-STATE ELECTRONICS, 1980, 23 (03) :263-268

[10] TYPE-2 LOCALIZED INTERFACE STATES AND SI SURFACE PREPARATION FOR NI, PT, AL-SI SCHOTTKY DIODES [J].

MURET, P ;

DENEUVILLE, A .

APPLIED PHYSICS LETTERS, 1978, 32 (04) :256-258

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