Thermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistor

被引：2

作者：

Lo, HB ^{[1
]}

Yang, ES

Yang, YF

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China

[2] Global Commun Semicond Inc, Torrance, CA 90505 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 12期

关键词：

D O I：

10.1063/1.123668

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature effect on current gains is presented for an AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT). Experimental results show that the HEBT has much less temperature sensitivity in current gain than a heterojunction bipolar transistor. The current gains for the HEBT are almost constant with the substrate temperature at a high current regime. This indicates that the HEBT could be a good candidate for power applications. (C) 1999 American Institute of Physics. [S0003-6951(99)04312-0].

引用

页码：1725 / 1727

页数：3

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