Microwave-frequency loss and dispersion in ferroelectric Ba0.3Sr0.7TiO3 thin films -: art. no. 082908

被引:29
作者
Booth, JC
Takeuchi, I
Chang, KS
机构
[1] Natl Inst Stand & Technol, Boulder, CO 80305 USA
[2] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA
[3] Univ Maryland, Ctr Superconduct Res, Dept Phys, College Pk, MD 20742 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2033139
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on broadband microwave-frequency measurements of epitaxial ferroelectric Ba0.3Sr0.7TiO3 thin films that reveal systematic increases in the loss and dispersion as the frequency increases toward 40 GHz. Our analysis provides evidence that the origin of this increased loss and dispersion is the direct coupling of microwave energy into a broad distribution of damped soft-phonon modes. We believe that nanometer-sized polar regions in the thin films play a role in this process, resulting in lattice-dynamical loss mechanisms that extend several decades in frequency below the frequency of the soft mode in these thin-film materials. (c) 2005 American Institute of Physics.
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页数:3
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共 21 条
[1]  
Booth JC, 2000, MATER RES SOC SYMP P, V603, P253
[2]   Dispersion and absorption in dielectrics I. Alternating current characteristics [J].
Cole, KS ;
Cole, RH .
JOURNAL OF CHEMICAL PHYSICS, 1941, 9 (04) :341-351
[3]   Improved low frequency and microwave dielectric response in strontium titanate thin films grown by pulsed laser ablation [J].
Dalberth, MJ ;
Stauber, RE ;
Price, JC ;
Rogers, CT ;
Galt, D .
APPLIED PHYSICS LETTERS, 1998, 72 (04) :507-509
[4]   SOME DIELECTRIC PROPERTIES OF BARIUM-STRONTIUM TITANATE CERAMICS AT 3000 MEGACYCLES [J].
DAVIS, L ;
RUBIN, LG .
JOURNAL OF APPLIED PHYSICS, 1953, 24 (09) :1194-1197
[5]   ELECTRIC-FIELD-INDUCED RAMAN EFFECT IN PARAELECTRIC CRYSTALS [J].
FLEURY, PA ;
WORLOCK, JM .
PHYSICAL REVIEW LETTERS, 1967, 18 (16) :665-&
[6]   Quantitative microwave near-field microscopy of dielectric properties [J].
Gao, C ;
Xiang, XD .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1998, 69 (11) :3846-3851
[7]   Do we really need ferroelectrics in paraelectric phase only in electrically controlled microwave devices? [J].
Gevorgian, SS ;
Kollberg, EL .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (11) :2117-2124
[8]   Mesoscopic microwave dispersion in ferroelectric thin films [J].
Hubert, C ;
Levy, J ;
Cukauskas, EJ ;
Kirchoefer, SW .
PHYSICAL REVIEW LETTERS, 2000, 85 (09) :1998-2001
[9]   MEASUREMENT OF HIGH-FREQUENCY DIELECTRIC CHARACTERISTICS IN THE MM-WAVE BAND FOR DIELECTRIC THIN-FILMS ON SEMICONDUCTOR SUBSTRATES [J].
IKUTA, K ;
UMEDA, Y ;
ISHII, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (9B) :L1211-L1213
[10]   Permittivity characterization of low-k thin films from transmission-line measurements [J].
Janezic, MD ;
Williams, DF ;
Blaschke, V ;
Karamcheti, A ;
Chang, CS .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (01) :132-136