Permittivity characterization of low-k thin films from transmission-line measurements

被引：70

作者：

Janezic, MD

Williams, DF

Blaschke, V

Karamcheti, A

Chang, CS

机构：

[1] Natl Inst Stand & Technol, Boulder, CO 80303 USA

[2] Int Sematech, Austin, TX 78741 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2003年 / 51卷 / 01期

关键词：

dielectric constant; low-k; measurement; microstrip; permittivity; thin film; transmission line;

D O I：

10.1109/TMTT.2002.806925

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a broad-band technique for measuring the relative permittivity of low-k thin films using microstrip transmission-line measurements. From measurements of the complex microstrip propagation constant and the characteristic impedance, we determined the relative permittivity of thin films incorporated in microstrip lines. We present measurement results to 40 GHz for both an oxide and a bisbenzoeyclobutene low-k thin-film and show a variability of permittivity of approximately +/-5% over the entire frequency range.

引用

页码：132 / 136

页数：5

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