An improved definition for modeling the threshold voltage of MOSFETs

被引：23

作者：

Ortiz-Conde, A

Rodriguez, J

Sanchez, FJG

Liou, JJ

机构：

[1] Univ Simon Bolivar, Dept Elect, Caracas 1080A, Venezuela

[2] Univ Cent Florida, Dept ECE, Orlando, FL 32816 USA

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 09期

关键词：

D O I：

10.1016/S0038-1101(98)00138-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Traditionally, the threshold voltage V-T of MOSFETs is modeled using the definition that the strong inversion occurs when the surface band bending is equal to twice the potential in bulk semiconductor. In this paper, an improved V-T definition is proposed. It is demonstrated that V-T calculated from the improved definition is in better agreement with those obtained from several existing V-T extraction methods than the conventional definition. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：1743 / 1746

页数：4

共 13 条

[1] MEASUREMENT OF THRESHOLD VOLTAGE AND CHANNEL LENGTH OF SUB-MICRON MOSFETS [J].

JAIN, S .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1988, 135 (06) :162-164

[2]

LATIF Z, 1997, P MICROELECTRONICS C, P281

[3] Extraction of the threshold voltage of MOSFETs: an overview [J].

Liou, JJ ;

Ortiz-Conde, A ;

Sanchez, FG .

1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 1997, :31-38

[4]

LIOU JJ, 1998, IN PRESS MODELING SI

[5]

LIOU JJ, 1994, ADV SEMICONDUCTOR DE

[6] A new approach to extract the threshold voltage of MOSFET's [J].

OrtizConde, A ;

Fernandes, EDG ;

Liou, JJ ;

Hassan, MR ;

GarciaSanchez, FJ ;

DeMercato, G ;

Wong, WS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (09) :1523-1528

[7] GENERAL SOLUTION OF QUANTIZATION IN A SEMICONDUCTOR SURFACE INVERSION LAYER IN ELECTRIC QUANTUM LIMIT [J].

PALS, JA .

PHYSICS LETTERS A, 1972, A 39 (02) :101-&

[8]

Schroeder D.K., 1990, SEMICONDUCTOR MAT DE

[9]

*SIB SYST, 1996, MICROTEC MAN

[10] CMOS scaling into the nanometer regime [J].

Taur, Y ;

Buchanan, DA ;

Chen, W ;

Frank, DJ ;

Ismail, KE ;

Lo, SH ;

SaiHalasz, GA ;

Viswanathan, RG ;

Wann, HJC ;

Wind, SJ ;

Wong, HS .

PROCEEDINGS OF THE IEEE, 1997, 85 (04) :486-504

← 1 2 →