Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon

被引：8

作者：

Naji, K. ^{[1
]}

Dumont, H. ^{[1
]}

Saint-Girons, G. ^{[1
]}

Penuelas, J. ^{[1
]}

Patriarche, G. ^{[2
]}

Hocevar, M. ^{[3
]}

Zwiller, V. ^{[3
]}

Gendry, M. ^{[1
]}

机构：

[1] Univ Lyon, Ecole Cent Lyon, INL, CNRS,UMR5270, F-69134 Ecully, France

[2] CNRS, LPN UPR20, F-91460 Marcoussis, France

[3] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

来源：

JOURNAL OF CRYSTAL GROWTH | 2012年 / 343卷 / 01期

关键词：

Crystal structure; Nanostructures; Molecular beam epitaxy; Nanomaterials; Perovskites; Semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2011.12.062

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present a study of the molecular beam epitaxy of InP nanowires (NWs) on (001) oriented SrTiO3 (STO) substrates using vapor liquid solid mechanism and gold-indium as metal catalyst. The growth direction of InP NWs grown on STO(001) is compared with NWs grown on (001) and (111) oriented silicon substrates. Gold-indium dewetting under a flux of indium results in the majority of InP NWs growing vertically from the surface of STO(001). With the growth parameters we have used the NWs have a pure wurtzite structure and are free of stacking faults and cubic segments. The structural quality of the NWs is confirmed by micro-photoluminescence measurements showing a narrow peak linewidth of 6.5 meV. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：101 / 104

页数：4

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