The effects of in-situ pretreatments of the substrate surface on the properties of PLZT films fabricated by a multi-target sputtering method

被引:13
作者
Kim, HH
Kim, ST
Lee, WJ
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[2] Samsung Elect, Semicond R&D Ctr, Yongin Gun 449900, Kyungki Do, South Korea
关键词
PLZT film; sputtering; pretreatment; interfacial layer;
D O I
10.1016/S0040-6090(97)01214-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, we investigated the effects of pretreatment of the substrate surface on the deposition behavior and electrical properties of (Pb, La)(Zr, Ti)O-3 (PLZT) films deposited on the Pt/Ti/SiO2/Si substrate by multi-target reactive sputtering. The pretreatments were carried out on the substrate by depositing single oxides (those of Pb, La, Zr or Ti) with a thickness of about 1 nm or less prior to the deposition process of the PLZT film. After the pretreatments, PLZT films were deposited under the same condition on the differently pretreated substrates. The film composition, crystal structure, grain size and electrical properties of the PLZT films varied depending on the pretreatment. It was found that appropriate pretreatments on the substrate enhanced the incorporation of ph at the early stage of deposition and facilitated the nucleation of the perovskite phase, which suppressed the formation of the Pb-deficient and Zr-rich interfacial layer and improved the electrical properties of the PLZT films. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:101 / 106
页数:6
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