Post-irradiation effects in a rad-hard technology

被引：4

作者：

Chabrerie, C

Musseau, O

Flament, O

Leray, JL

Boudenot, JC

Shipman, B

Callewaert, H

机构：

[1] THOMSON CSF,RGS,F-92231 GENNEVILLIERS,FRANCE

[2] TEKELEC,F-91953 LES ULIS,FRANCE

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 03期

关键词：

D O I：

10.1109/23.510720

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied radiation and post-irradiation effects in a CMOS rad-hard technology. The physical properties of charge detrapping in the gate oxide, investigated by isothermal and isochronal annealings, are dependent on the experimental procedure (bias, time storage, temperature, dose level).

引用

收藏

页码：826 / 830

页数：5

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