Sub-band-gap photoconductivity of individual α-Si3N4 nanowires

被引：22

作者：

Zhang, J. Y. ^{[1
]}

Chen, Y. X. ^{[1
]}

Guo, T. L. ^{[1
]}

Lin, Z. X. ^{[1
]}

Wang, T. H. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 32期

关键词：

D O I：

10.1088/0957-4484/18/32/325603

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Single-crystalline alpha-Si3N4 nanowires with diameters of a few tens of nanometres were grown by combustion synthesis, and the I-V characteristics in individual alpha-Si3N4 nanowires upon different light exposure were investigated. The conductance exhibits a sharp and marked rise (about one order of magnitude) upon 254 nm ultraviolet (UV) light exposure; in contrast, it does not respond to a 532 nm green laser. The fast response and recovery as well as the good reversibility between the high and low conductivity states make alpha-Si3N4 nanowires promising candidates for solar-blind photodetectors.

引用

页数：4

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