Two-dimensional analytical subthreshold model and optimal scaling of fully-depleted SOI MOSFET down to 0.1 mu m channel length

New two-dimensional analytical model for the potential distribution and the subthreshold factor in SOI MOS field-effect transistor (SOI MOSFET) is developed. The model accounts for the nonlinear potential distribution inside the buried oxide without use of any fitting parameters. The analytical model is compared to the numerical device simulation results and a good agreement is found. Our model accurately describes the effect of the subthreshold factor decrease with increasing the substrate doping concentration in thin-film fully-depleted SOI MOSFETs. The model can be utilized to predict design criteria for scaling down thin-film fully depleted SOI MOSFETs and is suitable for use in circuit simulators such as SPICE.