Crystallization of silicon carbide thin films by pulsed laser irradiation

被引：11

作者：

DeCesare, G

LaMonica, S

Maiello, G

Masini, G

Proverbio, E

Ferrari, A

Chitica, N

Dinescu, M

Alexandrescu, R

Morjan, I

Rotiu, E

机构：

[1] INST ATOM PHYS,LASER DEPT,RO-76900 BUCHAREST,ROMANIA

[2] UNIV ROMA LA SAPIENZA,DEPT ELECT ENGN,I-00184 ROME,ITALY

[3] INST GLASS & CERAM RES,BUCHAREST,ROMANIA

来源：

APPLIED SURFACE SCIENCE | 1996年 / 106卷

关键词：

D O I：

10.1016/S0169-4332(96)00399-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Pulsed laser irradiation at low incident fluences was demonstrated to be effective for the crystallization of amorphous hydrogenated silicon carbide (a-SiC:H) films deposited on Si wafers, The amorphous films, with a carbon content in the range 30-50%, were deposited on (100) Si wafers by low temperature plasma enhanced chemical vapor deposition (PECVD). The crystallization treatment was carried out by a multipulse KrF excimer laser, The crystallinity modifications induced by the laser treatment were evidenced by Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction. An important increase of the microhardness was evidenced as an effect of the laser treatment.

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收藏

页码：193 / 197

页数：5

相关论文

共 14 条

[1] PULSED-LASER DEPOSITION OF SILICON-CARBIDE AT ROOM-TEMPERATURE [J].

CAPANO, MA ;

WALCK, SD ;

MURRAY, PT ;

DEMPSEY, D ;

GRANT, JT .

APPLIED PHYSICS LETTERS, 1994, 64 (25) :3413-3415

[2] THIN-FILM DEPOSITION AND MICROELECTRONIC AND OPTOELECTRONIC DEVICE FABRICATION AND CHARACTERIZATION IN MONOCRYSTALLINE ALPHA AND BETA SILICON-CARBIDE [J].

DAVIS, RF ;

KELNER, G ;

SHUR, M ;

PALMOUR, JW ;

EDMOND, JA .

PROCEEDINGS OF THE IEEE, 1991, 79 (05) :677-701

[3] STRUCTURAL, OPTICAL AND ELECTRONIC-PROPERTIES OF WIDE-BAND GAP AMORPHOUS-CARBON SILICON ALLOYS [J].

DECESARE, G ;

GALLUZZI, F ;

GUATTARI, G ;

LEO, G ;

VINCENZONI, R ;

BEMPORAD, E .

DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :773-777

[4]

DECESARE G, IN PRESS SURF COATIN

[5] OPTIMIZATION OF A-SI1-XCXH FILMS PREPARED BY ULTRAHIGH-VACUUM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FOR ELECTROLUMINESCENT DEVICES [J].

DEMICHELIS, F ;

CROVINI, G ;

PIRRI, CF ;

TRESSO, E ;

AMATO, G ;

COSCIA, U ;

AMBROSONE, G ;

RAVA, P .

THIN SOLID FILMS, 1994, 241 (1-2) :274-277

[6] SURFACE STUDIES OF EPITAXIAL BETA-SIC ON SI(100) [J].

KAPLAN, R .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1636-1641

[7] STRUCTURAL AND ELECTRICAL-TRANSPORT PROPERTIES OF EXCIMER (ARF)-LASER-CRYSTALLIZED SILICON-CARBIDE [J].

LAU, SP ;

MARSHALL, JM ;

DYER, TE .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1995, 72 (03) :323-333

[8] EFFECT OF SIH4/CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-C [J].

LIU, CC ;

LEE, CY ;

CHENG, KL ;

CHENG, HC ;

YEW, TR .

APPLIED PHYSICS LETTERS, 1995, 66 (02) :168-170

[9] IR SPECTROSCOPY AND STRUCTURE OF RF MAGNETRON SPUTTERED A-SIC-H FILMS [J].

RUBEL, H ;

SCHRODER, B ;

FUHS, W ;

KRAUSKOPF, J ;

RUPP, T ;

BETHGE, K .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1987, 139 (01) :131-143

[10] REACTIVE ION ETCHING CHARACTERIZATION OF A-SIC-H IN CF4/O-2 PLASMA [J].

SAGGIO, G ;

VERONA, E ;

DIROSA, P ;

LAMONICA, S ;

SALOTTI, R ;

SCHIRONE, L .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3) :176-180