Transient topographies of ion patterned Si(111)

被引:60
作者
Brown, AD
Erlebacher, J [1 ]
Chan, WL
Chason, E
机构
[1] Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
[2] Brown Univ, Div Engn, Providence, RI 02912 USA
关键词
D O I
10.1103/PhysRevLett.95.056101
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The surface of high fluence ion-sputtered Si(111) was found to exhibit a rich variety of transient one- and two-dimensional topographies that may be exploited as tunable self-organized arrays of nanostructures. Such transient effects are only partially described by analytical models of sputter patterning. However, a discrete atom kinetic Monte Carlo simulation model incorporating curvature-dependent sputtering and surface diffusion reproduces many aspects of the transient morphological evolution, and clarifies the minimal model of sputter patterning.
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页数:4
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