The effect of downstream plasma treatments on graphene surfaces

被引：96

作者：

Peltekis, Nikolaos ^{[1
,2
]}

Kumar, Shishir ^{[1
,2
]}

McEvoy, Niall ^{[1
,2
]}

Lee, Kangho ^{[1
,2
,3
]}

Weidlich, Anne ^{[1
,2
]}

Duesberg, Georg S. ^{[1
,2
]}

机构：

[1] Trinity Coll Dublin, CRANN, Coll Green, Dublin 2, Ireland

[2] Trinity Coll Dublin, Sch Chem, Coll Green, Dublin 2, Ireland

[3] Korea Univ, Sch Elect Engn, Seoul 136713, South Korea

来源：

CARBON | 2012年 / 50卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

SCANNING-TUNNELING-MICROSCOPY; CARBON-FIBER SURFACES; X-RAY PHOTOEMISSION; LARGE-AREA; RAMAN-SCATTERING; GAS MOLECULES; FILMS; SPECTROSCOPY; GRAPHITE; DENSITY;

D O I：

10.1016/j.carbon.2011.08.052

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper reports on the effects of growth, transfer and annealing procedures on graphene grown by chemical vapour deposition. A combination of Raman spectroscopy, electrical measurements, atomic force microscopy, and X-ray photoemission spectroscopy allowed for the study of inherent characteristics and electronic structure of graphene films. Contributions from contaminants and surface inhomogeneities such as ripples were also examined. A new cleaning and reconstruction process for graphene, based on plasma treatments and annealing is presented, opening a new pathway for control over the surface chemistry of graphene films. The method has been successfully used on contacted graphene samples, demonstrating its potential for in situ cleaning, passivation and interface engineering of graphene devices. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：395 / 403

页数：9

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