Te doping of GaInP: Ordering and step structure

被引:43
作者
Lee, SH [1 ]
Fetzer, CY
Stringfellow, GB
Lee, DH
Seong, TY
机构
[1] Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA
[2] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 506712, South Korea
关键词
D O I
10.1063/1.369719
中图分类号
O59 [应用物理学];
学科分类号
摘要
The donor Te has been added to GaInP during organometallic vapor phase epitaxial growth using the precursor diethyltelluride. In agreement with previous studies, the addition of high Te concentrations leads to the elimination of the CuPt ordering observed in undoped layers. The degree of order is estimated from the low temperature photoluminescence peak energy to decrease from 0.5 at Te concentrations of <2x10(17) cm(-3) to 0 for Te concentrations of >6x10(17) cm(-3). This is verified by transmission electron diffraction studies, which show the elimination of the 1/2{111} superlattice spots at high Te doping levels. A remarkable change in the surface structure is found to accompany this decrease in ordering: The surfaces become much smoother. Step bunching is observed to disappear for the vicinal GaAs substrates, misoriented from (001) by 3 degrees in the B direction, and three-dimensional island (or mound) formation is eliminated for the singular (001) substrates. A qualitative model is presented explaining this behavior based on the effect of Te on the step structure and the bonding at step edges, both of which affect the adatom sticking at steps. (C) 1999 American Institute of Physics. [S0021-8979(99)01807-1].
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页码:3590 / 3596
页数:7
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